(Following Paper illand Roll No. to be filled in your Answer Book) •

I I'

Roll No.

B. Tech. (SEM, IV) THEORY EXAMINATION 2010-11 ELECTRICAL

AND ELECTRONICS MATERIALS

ENGINEERING

Time : 2 Hours P.

•.•.

Note': (1) (2) 1.

Attempt all the questions. All questions cany equal marks.

Attempt any four parts of the following: (a)

Define the atomic packing factor ~~.coordinat~on nu~ber.

(b)

The potential energy of two particles in the field of each other is given by: . A B V(r)=--+-.

l

ylO

Show that the potential energy in the stable configuration . is equal to

-4[A] -:-s y~

(c)

.

Explain the "Miller Indices". Also mention its significances in Material Sciences.

(e)

(i)

SIMPLE CUBIC CRYSTAL

(ii)

Boby centred Cubic Crystal (BCG)

(~)

Face"'centred Cubic Crystal (FCC).

Copper has an FCC crystal structure and an atomic radius of 1.278A. Calculate the density of copper. The atomic weight of copper is 63.54 gmlmol.

(f)

What is the difference

between

Schottky defect and

Frenkel defect in crystal lattices ? Also mention their significances.

...

I ~~ ne', I m

The sY,IIlbolshaving their usual meanings. A density of silver is 10.5

x

103 Kg/m3• The atomic wdght

of silveris 107.9. Assuming that each silver atom provides one conduction electron, calculate the density of electrons. The conductivity of silver at 20°C is 6.8

x

107 Q-I.m-l.

Calculate the mobility of electrons iri silver. (c) . Explain the "Meissner Effect". Also explain Type-I and II super conductors with their examples.

E~timate the London penetration depth from the following data:

(a) fJ1' •••.•

Explain the Hall Effect in semi conductor materials with related

diagram

and expressions.

Also mention

its

importances in semiconductor materials.- . An electric field of 100 V1m is applied to a sample of n-type sernicondutor whose Hall Coefficient is -0.0 125 rp3/c. Determine the current density in ..!be saIii}JlJ a;sur'ning ,.-

'-

\'

..•

Ile = 0.36 m2 V-I sec-I• (b)

Explain the

V-I Characteristics ofP-N Junction diode and

its temperature dependence. Find the increase in temperature DT necess.ary to increase 10 by a factor of 100. (c)

Write short notes on any two of the following: (i)

CONTINUITY

EQUATIONS

(ii)

SPACE CHARGE CAPACITANCE

(iii) MOBILITY OF SEMICONDUCTORS.

4.

(2xIO=20)

Attempt any two parts of the following: (a)

Write short notes on any two parts of the following: (i)

DIAMAGNETIC

(ii)

PARAMAGNETIC

MATERIALS

(iii) FERROMAGNETIC (b)

MATERIALS MATERIALS.

Define relative permeability.

Show that the relative

permeability :

I

~r

= 1 +X

I

where Xis the magnetic susceptibility .. (c)

Defme magnetostriction andmagnetostrictive energy. What is the cause of magneticstriction

f1' .'.

in ferromagnetic

~aterials ? A magnetic field strength in copper is 106 AIm. If the magnetic susceptibility 'of copper is 0.8

x

10-5,

calculate the flux density and magnetization in copper. .

(a)

,

~_O~10=20)

Attempt any two parts of the following :

What do you mean by "ANTIFERROMAGNETISM"

?

Which materials show this type of behaviour ? ,

.Calculate the average magnetic moment along the field direction per spin in Bohr Magneton when a paramagnetic spin system is subjected to a uniform field of 106 Aim at 27"C. (b)

Explain the temperature

dependency

on the magnetic

susceptibility of diamagnetic, paramagnetic, ferromagnetic, anti ferromagnetic and ferrimagnetic materials. (c)

Define ferrimagnetism. applications

What are ferrites ? Give some

where ferrimagnetic

materials

are used.

Explainwhat is magnetic anisotropy. How anisotropy can be induced by magnetic annealing?

UPTU B.Tech EEE-403 Electrical & Electronics Engineering ...

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