JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors S9013

TRANSISTOR (NPN)

SOT–23

FEATURES z High Collector Current. z Complementary to S9012. z Excellent hFE Linearity. 1. BASE

MARKING: J3

2. EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

3. COLLECTOR

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

500

mA

PC

Collector Power Dissipation

300

mW

Thermal Resistance From Junction To Ambient

416

℃/W

Tj

Junction Temperature

150



Tstg

Storage Temperature

-55~+150



RΘJA

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

= IC=0.1mA, IE 0 V(BR)CBO

40

V

Collector-emitter breakdown voltage

= IC=1mA, IB 0 V(BR)CEO

25

V

Emitter-base breakdown voltage

= IE=0.1mA, IC 0 V(BR)EBO

5

V

Collector cut-off current Collector cut-off current Emitter cut-off current

= VCB=40V, IE 0 ICBO

0.1

uA

= VCE=20V, IB 0 ICEO

0.1

uA

0.1

uA

= VEB=5V, IC 0 IEBO

DC current gain

hFE(1)

VCE=1V, = IC 50mA

120

hFE(2)

VCE = =1V, IC 500mA

40

400

Collector-emitter saturation voltage

VCE(sat)

IC=500mA, = IB 50mA

0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=500mA, = IB 50mA

1.2

V

VCB=1V,IC= 10mA,

0.7

V

Base-emitter voltage

VBE

Transition frequency

fT Cob

Collector output capacitance

VCE=6V,IC=20mA, f=30MHz VCB=6V, IE=0, f=1MHz

150

MHz 8

pF

CLASSIFICATION OF hFE(1) RANK

L

H

J

RANGE

120-200

200-350

300-400

B,Nov,2011

Typical Characterisitics Static Characteristic

100

hFE DC CURRENT GAIN

(mA)

IC

Ta=100℃

300uA 60

——

COMMON EMITTER VCE=1V

COMMON EMITTER Ta=25℃

350uA

IC COLLECTOR CURRENT

hFE

1000

400uA 80

S9013

250uA 200uA

40

150uA

Ta=25℃ 100

100uA 20

IB=50uA 10

0 0

4

8

12

16

COLLECTOR-EMITTER VOLTAGE

VCEsat

500

——

VCE

20

1

3

30

10

IC

VBEsat

1.2

500

100

COLLECTOR CURRENT

(V)

IC

(mA)

IC

——

BASE-EMITTER SATURATION VOLTAGE VBEsat (V)

COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV)

300

100

Ta=100℃ Ta=25℃

30

Ta=25℃

0.8

Ta=100℃

0.4

β=10

β=10 10 1

3

30

10

COLLECTOR CURRENT

1

3

30

10

(mA)

100

COLLECTOR CURRENT

—— VBE

IC

100

IC

0.0

500

100

Cob/ Cib

100

——

IC

VCB/ VEB f=1MHz IE=0/ IC=0

30

Ta=25℃

Cib 30

C

(pF)

Ta=100℃

10

CAPACITANCE

IC

(mA)

COMMON EMITTER VCE=1V

COLLECTOR CURRENT

500

(mA)

3

Ta=25℃

1

Cob

10

3

0.3

0.1 0.0

0.2

0.4

0.6

0.8

1 0.1

1.0

fT

1000

1

0.3

—— IC

PC ——

400

10

3

REVERSE VOLTAGE

BASE-EMMITER VOLTAGE VBE (V)

V

20

(V)

Ta

VCE=6V COLLECTOR POWER DISSIPATION PC (mW)

TRANSITION FREQUENCY

fT

(MHz)

Ta=25℃ 300

100

10

10

300

200

100

0 100

30

COLLECTOR CURRENT

IC

(mA)

0

25

50

75

AMBIENT TEMPERATURE

100

Ta

125

150

(℃ )

B,Nov,2011

SOT-23 Plastic-Encapsulate Transistors - GitHub

MARKING: J3. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted). Symbol. Parameter. Value. Unit. VCBO. Collector-Base Voltage. 40. V. VCEO.

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