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PHYSICAL REVIEW B 73, 201301共R兲 共2006兲

Phase transition, spin-charge separation, and spin filtering in a quantum dot Michael Pustilnik1 and László Borda2 1School 2Research

of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA Group “Theory of Condensed Matter” of the Hungarian Academy of Sciences, Institute of Physics, TU Budapest, Budafoki út 8., H-1521, Hungary 共Received 7 March 2006; published 1 May 2006兲

We consider low temperature transport through a lateral quantum dot asymmetrically coupled to two conducting leads, and tuned to the mixed-valence region separating two adjacent Coulomb blockade valleys with spin S = 1 / 2 and S = 1 on the dot. We demonstrate that this system exhibits a quantum phase transition driven by the gate voltage. In the vicinity of the transition, the spin on the dot is quantized, even though the fluctuations of charge are strong. The spin-charge separation leads to an unusual Fano-like dependence of the conductance on the gate voltage and to an almost perfect spin polarization of the current through the dot in the presence of a magnetic field. DOI: 10.1103/PhysRevB.73.201301

PACS number共s兲: 73.23.Hk, 73.63.Kv, 72.15.Qm

In a single-electron transistor setup1 the number of electrons N in a quantum dot is controlled by the potential on the capacitively coupled gate electrode. At low temperature N is close to an integer at almost any gate voltage, except narrow mixed-valence regions, where adding a single electron to the dot does not lead to a large penalty in electrostatic energy. The distance between these regions sets the scale for the dependence of measurable quantities on the gate voltage, which makes it convenient to use a dimensionless parameter N0, the gate voltage normalized by this scale. In terms of N0, the mixed-valence regions are narrow intervals of the width ⌬N ⬃ ⌫/EC Ⰶ 1,

共1兲

about half-integer values of N0.2 Here EC is the charging energy and ⌫ is the tunneling-induced width of singleparticle energy levels in the dot. In a typical experiment a dot is connected via tunneling junctions to two massive electrodes.1 At temperatures in the range ⌫ ⱗ T Ⰶ EC, the conductance G is suppressed outside the mixed-valence regions, resulting in a quasiperiodic sequence of well-defined Coulomb blockade peaks in the dependence G共N0兲.1,2 When T is further lowered, G共N0兲 changes dramatically due to the onset of the Kondo effect.2,3 At T → 0 pairs of adjacent Coulomb blockade peaks merge to form broad maxima at N ⬇ odd integer, separated by smooth crossovers from the minima at N ⬇ even integer. Although G共N0兲 at T ⲏ ⌫ is very different from that at T Ⰶ ⌫, in the mixed-valence regions both functions are featureless.2,3 The evolution of G toward its low-temperature limit can be rather complicated. Indeed, GaAs quantum dots with odd N usually have spin S = 1 / 2.4,5 In this case the dependence G共T兲 is characterized by a single energy scale, the Kondo temperature TK; G共T兲 increases monotonically with the decrease of T at T Ⰶ ⌫.2 However, dots with even N often have spin S = 1 rather than zero.4–6 The Kondo effect then occurs in two stages, controlled by two different energy scales, TK and TK⬘ ⬍ TK.7 The resulting G共T兲 is nonmonotonic: G first raises and then drops again when T is lowered.7,8 The dependence of the conductance on the Zeeman energy B of an 1098-0121/2006/73共20兲/201301共4兲

applied magnetic field is also nonmonotonic and is characterized by the same scales TK and TK⬘ .7 The values of TK and TK⬘ depend on N0 and their ratio, in general, is not tunable. A notable exception occurs when the conductances of the dot-lead junctions are very different, i.e., when the width ⌫ = ⌫L + ⌫R is dominated by the contribution from the lead with the stronger coupling to the dot, say, ⌫L Ⰷ ⌫R. 共Note that conductances of the junctions are easily tunable in lateral quantum dot systems such as those studied in Ref. 8.兲 It can be shown2 that in this limit, TK⬘ Ⰶ TK for all N0. In particular, in the vicinity of the mixed-valence region TK⬘ ⬃ ⌫R while TK ⬃ ⌫L Ⰷ TK⬘ . Accordingly, the second stage of the Kondo effect will not develop if ⌫R Ⰶ max兵T,B其 Ⰶ ⌫L .

共2兲

In this paper we show that under these conditions the conductance in the mixed-valence region between the Coulomb blockade valleys with S = 1 / 2 and S = 1 on the dot varies with N0 on the scale, which is parametrically small compared with ⌬N, in striking difference with the conventional smooth dependence described above. The dependence of the conductance on B at B Ⰷ T is qualitatively similar to its dependence on T at T Ⰷ B.2 Since B dependence is much easier to understand, we concentrate here on the limit T → 0 共the effect of a finite T is briefly discussed towards the end of the paper兲. The first inequality in Eq. 共2兲 allows one to take into account the coupling to the right lead in the lowest nonvanishing order in ⌫R / ⌫L. The conductance at any finite B is then given by2 g = g ↑ + g ↓,

gs = sin2 ␦s .

共3兲

Here g = G / G0 is the conductance normalized by G0 ⬃ 共e2 / h兲⌫R / ⌫L, the largest value conductance per spin can reach for strongly asymmetric coupling to the leads; gs is the conductance 共in units of G0兲 for electrons with spin s, and ␦s is scattering phase shift at the Fermi level for electrons with spin s in the left lead.

201301-1

©2006 The American Physical Society

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PHYSICAL REVIEW B 73, 201301共R兲 共2006兲

M. PUSTILNIK AND L. BORDA

In order to calculate the phase shifts, we model a quantum dot coupled to a single lead by the Hamiltonian 共4兲

H = H0 + Ht + Hd .

The first term here describes the electrons in the lead. For a lateral quantum dot it is sufficient to take into account only a single propagating mode,2,7 † H0 = 兺 ␰k␺ks ␺ks ,

共5兲

dot with fixed integer N. The reduction of the microscopic model 共4兲–共7兲 to the Kondo Hamiltonian 共10兲 is valid only when N0 is outside the mixed-valence region and at sufficiently low energies, ˜ 兩其, 兩␰k兩 ⱗ D = min兵dN,2EC兩N0 − N 0

where dN = ␦E 共dN = 2EC − ␧兲 for odd 共even兲 N. The parameters V and J in Eq. 共10兲 can be estimated as2,7 ˜ 兲−1, ␯V ⬃ ⌬N共N0 − N 0

ks

and the spectra ␰k can be linearized near the Fermi level, which corresponds to a constant density of states ␯. The second term in Eq. 共4兲 describes the tunneling coupling between the dot and the lead, † Ht = 兺 tn␺ks dns + H.c.

共6兲

nks

In the following we set tn = t, so that all levels in the dot have the same width ⌫ = ␲␯t2. This assumption is not essential for the validity of the following consideration. The last term in Eq. 共4兲 describes an isolated dot, † ˆ − N 兲2 − E Sˆ 2 − BSˆ . dns + EC共N Hd = 兺 ⑀ndns 0 S z

共7兲

ns

† † ˆ ss⬘dns⬘ are operators of dns and Sˆ = 21 兺nss⬘dns ␴ Here Nˆ = 兺nsdns the total number of electrons on the dot, and of the dot’s ˆ = 共␴ˆ x , ␴ˆ y , ␴ˆ z兲 are Pauli matrices兴. For a spin, respectively 关␴ typical dot, the parameters ␦E 共mean single-particle level spacing兲, ES 共exchange energy兲, and EC 共charging energy兲 satisfy ES Ⰶ ␦E Ⰶ EC.2 An isolated dot with even N will have S = 1 in the ground state if the spacing ␧ between the two single-particle levels closest to the Fermi level is anomalously small, 2ES − ␧ ⬎ 0.4–6 For simplicity, we assume here that 2ES − ␧ ⲏ ⌫. Although this simplification imposes a stronger restriction on ⌫ than ⌫ Ⰶ ␦E 共this inequality justifies the tunneling Hamiltonian description of the dot-lead junction2兲, it does not affect the results. For the model 共4兲–共7兲 the phase shifts are given by

␦↑ = 共␲/2兲共N + M兲,

␦↓ = 共␲/2兲共N − M兲,

共8兲

ˆ 典 is the number of electrons in the dot, and M where N = 具N ˆ = 2具S 典 is the dot’s magnetization.9 We start with N outside z

0

the mixed-valence region, ˜ 兩 Ⰶ 1, ⌬N Ⰶ 兩N0 − N 0

˜ − 1/2 = odd integer. N 0

共9兲

˜ ± 1 / 2 is close to an integer. The tunnelingHere N ⬇ N 0 induced virtual transitions to states with “wrong” N can be “integrated out” with the help of the Schrieffer-Wolff transformation, yielding an effective Kondo Hamiltonian, H = H0 + V␳ + J共s · S兲 − BSz ,

共10兲

† † ˆ ss⬘␺k⬘s⬘ are opera␺k⬘s and s = 21 兺kk⬘ss⬘␺ks ␴ where ␳ = 兺kk⬘s␺ks tors describing the local particle and spin densities of conduction electrons. The operator S in Eq. 共10兲 is a projection of Sˆ 关see Eq. 共7兲兴 on the ground state multiplet of an isolated

共11兲

␯J ⬃ 兩␯V兩.

共12兲

关It should be noted that V and J are subject to strong mesoscopic fluctuations; the order-of-magnitude estimate 共12兲 is sufficient for our purpose.兴 The potential scattering term in Eq. 共10兲 is responsible for the deviations ␦N of the dot’s occupation from the corre˜ ± 1 / 2, sponding integer values N 0 ˜ ± 1/2兲 ⬇ − 2␯V ⬃ ⌬ 共N ˜ − N 兲−1 . ␦N = N − 共N 0 N 0 0

共13兲

Note that 兩␦N兩 is finite and increases with an approach to the mixed-valence region. Also note that a weak magnetic field B Ⰶ ⌫ does not affect N共N0兲. On the contrary, M共N0兲 depends strongly on B. Indeed, M共B兲 for a given N0 is controlled by the Kondo temperature TK共N0兲, which can be estimated from ˜ 兩. ln共D/TK兲 ⬃ 共␯J兲−1 ⬃ ⌬N−1兩N0 − N 0

共14兲

˜ 兩 ⬃ ⌬ , and decreases expoAccordingly, TK ⬃ ⌫ at 兩N0 − N 0 N ˜ . A fixed field nentially with the increase of the distance to N 0 ˜ 兩 Ⰷ ⌬ , where ⌬ is the B is large compared to TK at 兩N0 − N 0 B B ˜ at which B ⬃ T 共N 兲. In this distance between N0 and N 0 K 0 regime, M/M 0 = 1 − 关2 ln共B/TK兲兴−1 ,

共15兲

˜ 共N ⬎ N ˜ 兲. In the opposite limit where M 0 = 1共2兲 for N0 ⬍ N 0 0 0 ˜ 兩 Ⰷ ⌬ 共note that ⌬ Ⰷ ⌬ for B Ⰶ ⌫兲, the system ⌬B Ⰷ 兩N0 − N 0 N B N is in the strong coupling regime B Ⰶ TK. Here M共N0兲 depends strongly on the parity of N. Indeed, S in Eq. 共10兲 is a spin˜ − N Ⰷ ⌬ 兲, and a spin-1 1 / 2 operator for odd N 共i.e., for N 0 0 N ˜ Ⰷ ⌬ 兲. This difference is crucial. operator for even N 共N0 − N 0 N An antiferromagnetic local exchange interaction with a single species of itinerant electrons suffices to completely screen S = 1 / 2 magnetic impurity, thereby forming a singlet 共nondegenerate兲 ground state.10–13 In this case the approach to the low-energy fixed point is Fermi-liquid-like,11 and M ⬃ B/TK .

共16兲

On the contrary, for S = 1 only half of the impurity’s spin is screened, and the ground state is a doublet.11,12 The lowenergy physics is then described by the ferromagnetic exchange of the conduction electrons with the remaining spin S = 1 / 2,11,12 and M = 1 + 关2 ln共TK/B兲兴−1 .

共17兲

Although the above results were obtained for N0 outside ˜ 兩 ⱗ ⌬ , some conclusions the mixed-valence region 兩N0 − N 0 N

201301-2

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PHYSICAL REVIEW B 73, 201301共R兲 共2006兲

PHASE TRANSITION, SPIN-CHARGE SEPARATION,¼

HQPT = H0⬘ + J⬘共s⬘ · S兲 − BSz .

共19兲

Here H0⬘ and s⬘ 关cf. H0 and s in Eq. 共10兲兴 are defined in terms of the operators ␺ks ⬘ acting in the basis of single-particle states that incorporate an extra scattering phase shift ␦* = ␲N* / 2. For HQPT to describe the change of the ground state symmetry at N0 = N*0, the exchange constant J⬘ must change its sign at this point.10–12 Assuming the dependence J⬘共N0兲 to be analytical, we can write FIG. 1. 共a兲 The number of electrons in the dot N differs appreciably from an integer in a narrow mixed-valence region of the width ⌬N. 共b兲 At B Ⰶ ⌫, the width ⌬ M of the crossover region in the dependence of the magnetization M on the gate voltage N0 is small compared to ⌬N. 共c兲 Spin-resolved conductances in the crossover region at T Ⰶ B Ⰶ ⌫. 共d兲 The total conductance at max兵B , T其 Ⰶ ⌫.

regarding this region can be drawn as well. Indeed, since ␦N in Eq. 共13兲 is finite, it is plausible that N varies continuously with N0, as sketched in Fig. 1共a兲. The dependence M共N0兲 is more complicated. Consider the limit B → + 0. In this limit M is determined solely by the ground state degeneracy. Since the degeneracy cannot change continuously, the system must go through a quantum phase transition 共QPT兲 at a certain N0 = N*0. As discussed above, the ground state is either a singlet or a doublet when the charge fluctuations are weak. Therefore, the transition ˜ 兩 must occur within the mixed-valence region, i.e., 兩N*0 − N 0 ⱗ ⌬N. The QPT manifests itself in a singular dependence of the magnetization M on the gate voltage,

␯J⬘共N0兲 ⬃ ⌬N−1共N*0 − N0兲.

The coefficient in Eq. 共20兲 has been chosen in such a way that ␯J⬘ ⬃ 1 for N*0 − N0 ⬃ ⌬N. This ensures the continuity of M共N0兲 throughout the singlet side of the transition N0 ⬍ N*0. A comment on the status of Eqs. 共19兲 and 共20兲 is in order here. The effective low-energy Hamiltonian HQPT is in the same relation to the original microscopic model 共4兲–共7兲 as, e.g., the effective Fermi-liquid description of strong coupling regime11 is to the Kondo model. As in the latter case, the applicability of HQPT can be verified by comparing the predictions of the two models. The magnetization for the model 共19兲 and 共20兲 is obtained using the standard scaling arguments.10 Very close to the transition 关when 兩␯J⬘兩ln共⌫ / B兲 Ⰶ 1兴, the first order perturbation theory in 兩␯J⬘兩 Ⰶ 1 yields M − 1 ⬇ − ␯J⬘/2 ⬃ ⌬N−1共N0 − N*0兲.

lim M = ␪共N0 − N*0兲.

共18兲

Note that in the vicinity of the transition the spin is quantized, even though the fluctuations of charge are very strong, N* = N共N*0兲 ⬇ half-integer 共unlike in the case of transitions that occur at a fixed integer N14,15兲. Any finite field lifts the degeneracy of the ground state. QPT then turns to a crossover, and the sharp step in the dependence of M共N0兲 is smeared. The crossover takes place in a narrow interval of gate voltages 兩N0 − N*0兩 ⱗ ⌬ M . We expect that at a sufficiently low field, the crossover width ⌬ M remains small compared to ⌬N; see Fig. 1共b兲. In order to estimate ⌬ M , we now construct an effective Hamiltonian HQPT for the vicinity of the transition. Such a Hamiltonian should be applicable at low energies 共B , T Ⰶ ⌫兲 and for N0 in the range 兩N0 − N*0兩 Ⰶ ⌬N, which includes the crossover region. At these energies and gate voltages, the number of electrons in the dot is approximately constant, N ⬇ N*, while M共N0兲 changes rapidly. It is therefore plausible that HQPT acts only on the spin degrees of freedom 共spin-charge separation兲. At energies below ⌫, half of the dot’s spin when it is in the triplet state is already screened. The simplest possible model accounting for the interaction of the 共still unscreened兲 spin-1 / 2 with electrons in the narrow strip of energies 兩␰k兩 ⱗ ⌫ reads as

共21兲

On the doublet side, M共N0兲 slowly increases with the distance to the transition, saturating at M = 1 + 关2 ln共⌫/B兲兴−1 .

B→+0

共20兲

共22兲

Note that Eq. 共22兲 matches Eq. 共17兲 at the border of the mixed-valence region. On the singlet side of the transition 共N0 ⬍ N*0兲, the magnetization is given by Eq. 共15兲 共with M 0 = 1兲 for B Ⰷ TK and by Eq. 共16兲 for B Ⰶ TK, where the Kondo temperature TK共N0兲 satisfies ln共⌫/TK兲 = 共␯J⬘兲−1 ⬃ ⌬N共N*0 − N0兲−1 .

共23兲

TK increases with the distance to the QPT from TK = 0 at N0 = N*0 to TK ⬃ ⌫ at the border of the mixed valence region, where it matches Eq. 共14兲. As N0 is tuned through the mixed-valence region M grows monotonically from M ⬃ B / ⌫ Ⰶ 1 to the value given by Eq. 共22兲. The increase takes place mainly in a narrow interval on the singlet side of the transition, where B ⱗ TK共N0兲. Equation 共23兲 then yields the estimate ⌬M ⬃

⌬N . ln共⌫/B兲

共24兲

The evolution of the phase shifts with N0 can now be deduced from Eq. 共8兲. To the left of the crossover 关see Fig. 1共b兲兴 both phase shifts are given by ␦s ⬇ ␲N* / 2 with N* ˜ ; see Eq. 共9兲. As N is tuned through the crossover, ␦ ⬇N 0 0 ↑ raises, while ␦↓ drops by approximately ␲ / 2. Therefore the phase shifts necessarily pass through, respectively, the antiresonance ␦↑ = 0 共mod ␲兲 and resonance ␦↓ = ␲ / 2 共mod ␲兲.

201301-3

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M. PUSTILNIK AND L. BORDA

⑀n = n␧/2,

FIG. 2. Results of NRG simulations of the model 共4兲–共7兲 and 共25兲 with ⌫ / EC = 0.05, ES / EC = 0.16, and ␧ / EC = 0.1. 共a兲 Magnetization M共N0兲 at different B. At the transition M = 1 independently of B, in agreement with Eq. 共21兲. 共b兲 Dot’s occupation N共N0兲. 共c兲 Conductance g共N0兲 at B / ⌫ = 2.5⫻ 10−11. Note that in this case ␣ = N* − 3 / 2 ⬇ −0.25⬍ 0, hence the difference with Fig. 1共d兲.

Hence, within the crossover region, the conductances 共3兲 satisfy g↑ / g↓ Ⰶ 1, and g↑ vanishes identically at some value of N0. In other words, the system acts as a perfect spin filter. Details of the dependencies gs共N0兲 are sensitive to the dot’s occupation at the transition N*. While N* is close to a half-integer, it’s precise value is obviously nonuniversal. For example, N* depends on the values of tn for all n in Eq. 共6兲. In Fig. 1共c兲 we sketch gs共N0兲 for 0 ⬍ ␣ Ⰶ 1, where ␣ = N* ˜ . The dependence of the total conductance g on N in −N 0 0 this case has a characteristic Fano-like shape; see Fig. 1共d兲. In order to verify the applicability of the effective Hamiltonian 共19兲, we performed extensive numerical renormalization group 共NRG兲13 simulations. For this purpose, we truncated the dot’s Hamiltonian 共7兲 to that of a two-level system15 with

1 L.

P. Kouwenhoven et al., in Mesoscopic Electron Transport, edited by L. L. Sohn et al. 共Kluwer, Dordrecht, 1997兲, p. 105. 2 M. Pustilnik and L. I. Glazman, J. Phys.: Condens. Matter 16, R513 共2004兲; L. I. Glazman and M. Pustilnik, cond-mat/ 0501007 共unpublished兲. 3 W. G. van der Wiel et al., Science 289, 2105 共2000兲; Y. Ji et al., Phys. Rev. Lett. 88, 076601 共2002兲. 4 A dot with even N will have S = 1, if the spacing between the two single-particle levels closest to the Fermi level is very small 共see Refs. 5–7兲. This condition is easy to satisfy since the spacing is tunable 共Ref. 8兲. However, having S ⬎ 1 共e.g., S = 3 / 2 for odd N兲 requires three or more levels to be nearly degenerate, which happens rarely, if ever. 5 R. M. Potok et al., Phys. Rev. Lett. 91, 016802 共2003兲; J. A. Folk et al., Phys. Scr. T90, 26 共2001兲; S. Lindemann et al., Phys. Rev. B 66, 195314 共2002兲. 6 P. W. Brouwer et al., Phys. Rev. B 60, R13977 共1999兲; H. U. Baranger et al., Phys. Rev. B 61, R2425 共2000兲.

n = ± 1.

共25兲

The NRG data, see Fig. 2, are indeed in excellent agreement with the behavior expected from Eq. 共19兲. The sharpening of the step in the dependence M共N0兲 with the decrease of B, obvious in Fig. 2共a兲, is described very well by ⌬M / ⌬N = a关ln−1共⌫ / B兲 + b ln−2共⌫ / B兲兴 with a = 3.0 and b = 9.5; at a low field this agrees with Eq. 共24兲. Here we defined ⌬M as the distance in N0 between the points where M = 0.5 and 1, and ⌬N as the distance between the points in Fig. 2共b兲, where N = 1.25 and 1.75. So far, we considered the conductance at T = 0. The above results are valid as long as T Ⰶ B; corrections to gs in this case are of the order of 共T / B兲2, and the spin-filtering property remains intact: min兵g↑ / g↓其 ⬃ 共T / B兲2 Ⰶ 1. At T Ⰷ B the field has a negligible effect. The dependence g共N0兲 in this limit is very similar to that at B Ⰷ T; see Figs. 1共d兲 and 2共c兲, with T replacing B in the crossover width, Eq. 共24兲. This peculiar dependence will be observable already at moderately low temperatures T ⱗ ⌫ 关note that the observability of the conventional Kondo effect requires T ⱗ min兵TK其 Ⰶ ⌫兴. To conclude, we studied a lateral quantum dot asymmetrically coupled to two conducting leads, and tuned to the mixed-valence region between the Coulomb blockade valleys with S = 1 / 2 and S = 1 on the dot. This regime can be realized in devices such as those studied in Ref. 8. We predict that, contrary to naive expectations, the conductance varies with the gate voltage on the scale that is parametrically small compared with the width of the mixed-valence region. We thank N. Andrei, V. Cheianov, V. I. Falko, L. I. Glazman, A. J. Millis, and S. Tarucha for valuable discussions. This work was supported by the Nanoscience/ Nanoengineering Research Program of Georgia Tech, by EC RTN2-2001-00440 “Spintronics,” Project OTKA D048665, and by the János Bolyai Scholarship.

7 M.

Pustilnik and L. I. Glazman, Phys. Rev. Lett. 87, 216601 共2001兲. 8 W. G. van der Wiel et al., Phys. Rev. Lett. 88, 126803 共2002兲; D. M. Zumbühl et al., ibid. 93, 256801 共2004兲. 9 Note that in Eq. 共3兲 the phase shifts are defined mod ␲ 共i.e., ␦ , s and ␦s + ␲, are equivalent兲. The ambiguity is removed in Eq. 共8兲 by setting ␦s = 0 for N0 → −⬁. 10 P. W. Anderson, J. Phys. C 3, 2436 共1970兲. 11 P. Nozières, J. Low Temp. Phys. 17, 31 共1974兲; P. Nozières and A. Blandin, J. Phys. 共France兲 41, 193 共1980兲. 12 N. Andrei et al., Rev. Mod. Phys. 55, 331 共1983兲; A. M. Tsvelick and P. B. Wiegmann, Adv. Phys. 32, 453 共1983兲. 13 K. G. Wilson, Rev. Mod. Phys. 47, 773 共1975兲; H. R. Krishnamurthy et al., Phys. Rev. B 21, 1003 共1980兲; 21, 1044 共1980兲. 14 W. Hofstetter and H. Schoeller, Phys. Rev. Lett. 88, 016803 共2001兲; M. Garst et al., Phys. Rev. B 69, 214413 共2004兲. 15 M. Pustilnik et al., Phys. Rev. B 68, 161303共R兲 共2003兲.

201301-4

Phase transition, spin-charge separation, and spin ...

May 1, 2006 - Received 7 March 2006; published 1 May 2006 ... about half-integer values of N0.2 Here EC is the charging ..... field this agrees with Eq. 24.

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