APPLIED PHYSICS LETTERS 93, 262903 共2008兲

Cation ordering in epitaxial lead zirconate titanate films L. C. Zhang,1 A. L. Vasiliev,2 I. B. Misirlioglu,3 R. Ramesh,4 S. P. Alpay,1 and M. Aindow1,a兲 1

Department of Chemical, Materials and Biomolecular Engineering and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269, USA 2 Institute of Crystallography, Russian Academy of Sciences, Leninskij pr., 59, 119333 Moscow, Russia 3 Materials Science and Engineering, Faculty of Engineering and Natural Sciences, Sabancı University, Tuzla, 34956 Istanbul, Turkey 4 Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, California 94720, USA

共Received 23 October 2008; accepted 6 December 2008; published online 29 December 2008兲 Electron diffraction and atom location by channeling enhanced microanalysis were used to show that epitaxial PbZr0.2Ti0.8O3 films grown on 共001兲 SrTiO3 substrates by pulsed laser deposition exhibit long-range order on the tetravalent cation sublattice parallel to the film/substrate interface. This ordering gives two distinct tetravalent cation sites, one Zr lean and one Zr rich, and results in a superlattice with a tetragonal unit cell with lattice parameters a0 ⬇ 冑 2aPZT and c0 ⬇ aPZT. Since such ordered states are inherently unstable in homovalent perovskite solutions, it is inferred that the ordering arises in response to the lattice misfit and could constitute an additional relaxation mode. © 2008 American Institute of Physics. 关DOI: 10.1063/1.3058755兴 Ferroelectric materials have received considerable interest in recent years due to their numerous potential device applications as elements of nonvolatile random access memories, dynamic random access memories, high dielectric constant capacitors, optical waveguides, tunable devices, and pyroelectric detectors. The electrical and electromechanical properties of ferroelectric films may differ significantly from those of the bulk single-crystal form due to the presence of internal stresses.1 Internal stresses arise for several reasons in ferroelectric films including: the lattice mismatch between film and the substrate for epitaxial films, differences between the thermal expansion coefficients of the film and substrate, the self-strain of the ferroelectric phase transformation if the material is grown above the phase transformation temperature, and microstresses due to defects. In order to relieve the internal stresses that develop during film growth and subsequent cooling, complex defect structures are formed including: polydomains, antiphase boundaries, interfacial misfit dislocations, and threading dislocations 共see, e.g., Ref. 2 and the references therein兲. These complicated microstructures evolve to relieve the internal stresses that develop during film growth and subsequent cooling from the deposition temperature. In this study, we report transmission electron microscopy 共TEM兲 evidence for long-range cation ordering parallel to the interface plane in epitaxial 共001兲 PbZr0.2Ti0.8O3 共PZT兲 films deposited on 共001兲 single-crystal SrTiO3 共STO兲 substrates by pulsed laser deposition 共PLD兲. Our results suggest that the ordering occurs in response to the stresses in the film and could, therefore, be considered as an additional relaxation mechanism. Epitaxial PZT films of ~300 nm in thickness were grown by PLD onto Sr–O terminated Crystech 共001兲 STO substrates using a 248 nm KrF pulsed excimer laser. The growth conditions used were those that have been shown previously to result in high quality epitaxial films with the orientation relationship: 共001兲PZT 储 共001兲STO and 关100兴PZT 储 关100兴STO.2 Briefly, the substrates were cleaned with methanol and aca兲

Electronic mail: [email protected].

0003-6951/2008/93共26兲/262903/3/$23.00

etone in an ultrasonic cleaner followed by a surface reflectivity check using an optical microscope. The substrates were heated to 600 ° C and films were deposited from a PZT ceramic target using a pulse repetition rate of 5 Hz and a pulse energy of 600 mJ under an O2 partial pressure of 100 mTorr. The chamber was then backfilled with O2 before allowing the films to cool to room temperature at a rate of 5 ° C / min. For TEM studies, plan-view and cross-sectional specimens were prepared by mechanical prethinning followed by Ar+ ion-beam milling to perforation with liquid nitrogen 共LN2兲 cooling. Plan-view specimens were thinned from the substrate side only with a thin glass cover slip placed over the deposit side during milling to prevent redeposition onto the sample surface. Microstructural observations and microanalysis experiments were performed in a JEOL JEM2010 FasTEM operating at 200 kV and equipped with an EDAX Phoenix ultrathin-window energy-dispersive x-ray spectrometer 共EDXS兲. Examples of the TEM data from these films are shown in Fig. 1. The bright-field TEM images obtained from the planview and cross-sectional specimens 关e.g., Figs. 1共a兲 and 1共d兲, respectively兴 confirmed that the films are single crystal and that they contain a wide range of microstructural features including embedded a-oriented domains lying on the 兵101其 planes and very high densities 共Ⰷ1010 cm−2兲 of threading dislocations. The character and origins of these features have been discussed in detail elsewhere.2–5 Selected area diffraction patterns 共SADPs兲 obtained with the beam direction B parallel to 关001兴 in regions of the plan-view specimen with no a-oriented domains 关e.g., Fig. 1共b兲兴 exhibited strong 100and 110-type diffraction maxima as expected for PZT. In these samples, however, the SADPs contained additional weak 21 21 0-type maxima. Since these maxima were also present in SADPs obtained from samples tilted away from 关001兴 along the 110-type systematic rows 关e.g., Fig. 1共c兲兴, they cannot be due to some high-order plural scattering effect and must correspond to the development of an ordered superlattice structure. Interestingly, these maxima were only observed in 共 21 h , 21 k , 0兲 positions 共where h , k = 2n + 1兲, but

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© 2008 American Institute of Physics

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Appl. Phys. Lett. 93, 262903 共2008兲

FIG. 2. 共Color online兲 Partial Pb–Zr–Ti ternary section showing the ALCHEMI data obtained from the ordered PZT film including the compositions measured using EDXS at nonchanneling and channeling orientations, the best-fit OTL, and the limiting compositions for the most highly ordered state possible.

FIG. 1. TEM data obtained from plan-view 关共a兲–共c兲兴 and cross-sectional 关共d兲–共f兲兴 TEM specimens: 共a兲 bright-field image obtained with B ⬇ 关001兴, 共b兲 关001兴 zone-axis SADP, 共c兲 SADP obtained from the same region as 共b兲 by ¯ 0 Kikuchi band, 共d兲 bright-field image tilting away from 关001兴 along the 11 obtained with B ⬇ 关010兴, 共e兲 关010兴 zone-axis SADP, and 共f兲 关110兴 zone-axis SADP.

never in 共 21 h , 0 , 21 l兲 or 共0 , 21 k , 21 l兲 positions. Figures 1共e兲 and 1共f兲 are SADPs obtained from cross-sectional specimens ¯ 0兴, respectively; only the maxima exwith B = 关100兴 and 关11 pected for PZT are observed in Fig. 1共e兲, whereas Fig. 1共f兲 contains weak 21 21 0-type maxima as observed in patterns from the plan-view samples. Thus, the superlattice structure corresponds to ordering parallel to 共001兲, i.e., parallel to the interface between the film and the substrate. We note that this ordering was sensitive to the specimen preparation conditions: no superlattice maxima were observed in SADPs from samples ion-milled at higher accelerating voltages or with no LN2 cooling. Moreover, there was some evidence for local electron-beam-induced disordering as the intensity of the superlattice reflections from a particular sample area decreased with increasing observation time. In general, superlattice structures can be formed by displacive and/or replacive ordering. For PZT there are several possible ways in which structural ordering could occur including cation polarization with antiparallel 关110兴 P displacements of the Pb cations,6 ordering of Zr and Ti on the tetravalent cation sublattice,7 ordering of oxygen vacancies on the anion sublattice,8 or coordinated rotations of oxygen octahedra.9,10 From the ease with which the superlattice

maxima were detected and their persistence in tilting experiments, it was deduced that cation ordering was the most likely explanation for this effect and EDXS-based atom location by channeling enhanced microanalysis 共ALCHEMI兲 experiments were performed to test this hypothesis. The EDXS data were obtained from regions that contained no a-oriented domains. The samples were first tilted toward the detector to minimize x-ray absorption effects and for each region an EDXS spectrum was acquired at a nonchanneling orientation to verify the overall cation chemistry of the film. Planar ALCHEMI data were then acquired by reorienting the sample to give two-beam conditions for the operative diffraction vector g and then acquiring spectra at positive and negative deviations s from the Bragg condition. A strong channeling effect 共⬇10%兲 was observed in such experiments with the cation compositions measured with s ⬎ 0 for g = 21 21 0 having more Ti but less Zr than the average and vice versa for s ⬍ 0. Figure 2 is a partial Pb–Ti–Zr ternary section showing the average composition measured from nonchanneling orientations and the individual compositions measured from channeling orientations. Following Hou et al.11 a best-fit ordering tie line 共OTL兲 was constructed passing through the average composition to indicate the sense of the ordering. Since the OTL lies at constant Pb content 共50 at. %兲, the data confirm the ordering of Ti and Zr on the tetravalent cation sublattice. This ordering would give two distinct sites, one Zr rich and the other Zr lean; in the limit 共i.e., in the most ordered state possible兲, these sites would have compositions 60% Ti, 40% Zr, and 100% Ti, respectively. These site composition limits are indicated in Fig. 2 by ␣ and ␤, respectively. The only arrangement of these two tetravalent sites that is consistent with the diffraction data is the one shown in Fig. 3. Figure 3共a兲 is a projection along 关001兴 showing an alternating arrangement of ␣ and ␤ sites in 共001兲 such that each of the 共110兲 planes contains all ␣ or all ␤ sites and similarly ¯ 0兲. The unit cell for the resulting superlattice structure for 共11

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presented here can be reconciled if one considers the possible influence of the substrate on the PZT thin film. There have been several reports of misfit-strain-induced long-range ordering in epitaxial semiconductor thin films 共e.g., Refs. 20–22兲, whereby the change in the lattice parameter associated with the formation of the ordered state serves to relax partially the misfit between the thin film and substrate. It seems likely that similar effects are responsible for the superlattice structure in the present case since the ordering occurs only parallel to the interface plane, and the deposit disorders readily during TEM sample preparation and/or observation when the constraint of the substrate is removed. Thus, the formation of the ordered state shown in Fig. 3 may constitute an additional mode of misfit stress relaxation in PZT. While it is difficult to estimate the degree of relaxation that this would provide, we note that this should be more significant where the conventional stress relaxation mechanisms, such as misfit dislocation and polydomain generation, are suppressed. This might apply for ultrathin epitaxial films and/or in films where the eigenstrain of the ferroelectric phase transformation is small. FIG. 3. 共Color online兲 Structural model for the ordered superstructure: 共a兲 关001兴 projection showing the partitioning of Zr onto half of the original tetravalent sites and 共b兲 tetragonal unit cell of the ordered superstructure.

is shown in Fig. 3共b兲: this is tetragonal with lattice parameters a0 ⬇ 冑 2aPZT and c0 ⬇ aPZT. The observation of a previously unreported ordered state is remarkable for a system such as PZT, which has been studied so extensively. Both PbTiO3 and PbZrO3 have the prototypical ABO3 perovskite lattice. PbTiO3 transforms from a cubic paraelectric to a tetragonal ferroelectric phase at 490 ° C upon cooling. PbZrO3, on the other hand, displays an antiferroelectric phase transformation at around 240 ° C. PZT compounds 共PbZr1−xTixO3兲 with x ⬎ 0.5 are ferroelectric with a tetragonal crystal lattice at room temperature, whereas in compounds with x ⬍ 0.5, two variants of a rhombohedral phase may exist. For PZT with x ⬇ 0.5, it has also been proposed a monoclinic phase could form at the socalled morphotropic phase boundary 共MPB兲,12 although recent theoretical studies show that this phase might be a mixture of tetragonal and rhombohedral phases instead.13 It is clear that the phases that form in the PZT system depend critically on the arrangement of the Zr and Ti atoms in the solid solution. Cation ordering, not only in PZT but also in several relaxor ferroelectrics,14 has been a topic of great scientific and technological interest because these materials have an extremely high piezoelectric response, especially near MPBs. Theoretical results show that the formation of the different phases in the PZT system might be explained via atomic displacements 共or “ordering”兲 due to electrostatic interactions between ions.15,16 However, the positive enthalpy of mixing in the PZT system throughout the entire composition range,17 the common observation of two phase mixtures near the MPB,18 and comparative TEM studies of PZT with relaxor ferroelectrics19 indicate that there is no tendency for chemical ordering of Zr and Ti ions at the B site of the PZT lattice. The apparent contradiction of this conclusion with the experimental observations of chemical order

The work at UConn was supported by the National U.S. Army Research Office through Grant No. W911NF-05-10528 and by the American Chemical Society, The Petroleum Research Fund. 1

D. G. Schlom, L.-Q. Chen, C.-B. Eom, K. M. Rabe, S. K. Streiffer, and J.-M. Triscone, Annu. Rev. Mater. Res. 37, 589 共2007兲. 2 I. B. Misirlioglu, A. L. Vasiliev, M. Aindow, S. P. Alpay, and R. Ramesh, J. Mater. Sci. 41, 697 共2006兲. 3 B. S. Kwak, A. Erbil, J. D. Budai, M. F. Chisholm, L. A. Boatner, and B. J. Wilkens, Phys. Rev. B 49, 14865 共1994兲. 4 S. P. Alpay and A. L. Roytburd, J. Appl. Phys. 83, 4714 共1998兲. 5 I. B. Misirlioglu, A. L. Vasiliev, M. Aindow, S. P. Alpay, and R. Ramesh, Appl. Phys. Lett. 84, 1742 共2004兲; I. B. Misirlioglu, S. P. Alpay, M. Aindow, and V. Nagarajan, ibid. 88, 102906 共2006兲. 6 J. Ricote, D. L. Corker, R. W. Whatmore, S. A. Impey, A. M. Glazer, J. Dec, and K. Roleder, J. Phys.: Condens. Matter 10, 1767 共1998兲. 7 J. Frantti, S. Ivanov, J. Lappalainen, S. Eriksson, V. Lantto, S. Nishio, M. Kakihana, and H. Rundlof, Ferroelectrics 266, 73 共2002兲. 8 J. F. Scott and M. Dawber, Appl. Phys. Lett. 76, 3801 共2000兲. 9 Ragini, S. K. Mishra, D. Pandey, H. Lemmens, and G. Van Tendeloo, Phys. Rev. B 64, 054104 共2001兲. 10 B. Noheda, L. Wu, and Y. Zhu, Phys. Rev. B 66, 060103 共2002兲. 11 D. H. Hou, I. P. Jones, and H. L. Fraser, Philos. Mag. A 74, 741 共1996兲. 12 B. Noheda, D. E. Cox, G. Shirane, J. A. Gonzalo, L. E. Cross, and S.-E. Park, Appl. Phys. Lett. 74, 2059 共1999兲. 13 Y. M. Jin, Y. U. Wang, A. G. Khachaturyan, J. F. Li, and D. Viehland, Phys. Rev. Lett. 91, 197601 共2003兲; G. A. Rossetti, Jr., W. Zhang, and A. G. Khachaturyan, Appl. Phys. Lett. 88, 072912 共2006兲; G. A. Rossetti, Jr. and A. G. Khachaturyan, ibid. 91, 072909 共2007兲. 14 See, e.g., P. K. Davies, Curr. Opin. Solid State Mater. Sci. 4, 467 共1999兲 and references therein. 15 L. Bellaiche and D. Vanderbilt, Phys. Rev. Lett. 81, 1318 共1998兲. 16 I. Grinberg, V. R. Cooper, and A. M. Rappe, Nature 共London兲 419, 909 共2002兲. 17 M. V. Rane, A. Navrotsky, and G. A. Rossetti, Jr., J. Solid State Chem. 161, 402 共2001兲. 18 K. A. Schönau, L. A. Schmitt, M. Knapp, H. Fuess, R.-A. Eichel, H. Kungl, and M. J. Hoffmann, Phys. Rev. B 75, 184117 共2007兲. 19 C. A. Randall, A. S. Bhalla, T. R. Shrout, and L. E. Cross, J. Mater. Res. 5, 829 共1990兲. 20 T. S. Kuan, T. F. Kuech, W. I. Wang, and E. L. Wilkie, Phys. Rev. Lett. 54, 201 共1985兲. 21 A. Ourmazd and J. C. Bean, Phys. Rev. Lett. 55, 765 共1985兲. 22 P. B. Littlewood, Phys. Rev. B 34, 1363 共1986兲.

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Cation ordering in epitaxial lead zirconate titanate films

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